Molecular beam epitaxy solar cells
MBE of III–V Semiconductors for Solar Cells | part of Molecular Beam
In this chapter, the solid‐source molecular beam epitaxy (SS‐MBE) growth of solar cells with phosphorus‐based materials such as InGaP and InGaAsP, as well as the growth conditions to obtain high‐quality tunnel junctions for the fabrication of multi‐junction solar cells, are described. InGaP solar cells and InGaAsP solar cells grown
Basics of Molecular Beam Epitaxy (MBE) technique
Molecular Beam Epitaxy (MBE) represents a widely used growth technique to approach the basic research applied to the growth of
MBE of III–V Semiconductors for Solar Cells | part of Molecular
In this chapter, the solid‐source molecular beam epitaxy (SS‐MBE) growth of solar cells with phosphorus‐based materials such as InGaP and InGaAsP, as well as the growth conditions to
Comparison of single junction AlGaInP and GaInP solar cells
We have investigated ∼2.0 eV (AlxGa1−x)0.51In0.49P and ∼1.9 eV Ga0.51In0.49P single junction solar cells grown on both on-axis and misoriented GaAs substrates by molecular beam epitaxy (MBE).
2.0–2.2 eV AlGaInP solar cells grown by molecular beam epitaxy
We demonstrate 2.0–2.2 eV AlGaInP solar cells grown by molecular beam epitaxy and their performance improvement by rapid thermal annealing (RTA). As grown,
Molecular beam epitaxy growth of germanium junctions for multi-junction
We report on the molecular beam epitaxy (MBE) growth and device characteristics of Ge solar cells. Integrating a Ge bottom cell beneath a lattice-matched triple junction stack grown by MBE could enable ultra-high efficiencies without metamorphic growth or
Abrupt Te doping of GaInP grown by molecular beam epitaxy for
We report abrupt Te doping of GaInP solar cells grown by molecular beam epitaxy (MBE) through the use of a low substrate temperature of 420 °C and subsequent
High-efficiency AlGaInP solar cells grown by molecular beam epitaxy
(Al X Ga 1-X) 0.51 In 0.49 P (AlGaInP) is a promising top cell material for 5-6J devices due to its wide and tunable bandgap (E g).Moreover, 1.9–2.2 eV AlGaInP can be grown lattice-matched on GaAs, making it readily incorporable into the high-efficiency lattice-matched GaInP/GaAs/GaInNAsSb devices grown by molecular beam epitaxy (MBE). 3 Historically, the
Mn-Doped Ge Nanoparticles Grown on SiO2 Thin Films by Molecular Beam
In this work, we propose a novel efficient strategy based on the combination of molecular beam epitaxy deposition and the solid-state dewetting process for the growth and self-assembly of magnetic GeMn nanoparticles on the SiO 2 substrate.
2.0–2.2 eV AlGaInP solar cells grown by molecular beam epitaxy
We demonstrate 2.0–2.2 eV AlGaInP solar cells grown by molecular beam epitaxy and their performance improvement by rapid thermal annealing (RTA). As grown, these cells exhibit lower performance than their counterparts grown by metal-organic vapor phase epitaxy (MOVPE), indicating a high concentration of point defects. RTA improves
Molecular Beam Epitaxy Deposition of In Situ O‐Doped CdS Films
For high-efficiency Sb 2 (S,Se) 3 solar cells, the most commonly used electron-transporting layer of cadmium sulfide (CdS) is generally prepared by chemical bath deposition
Molecular Beam Epitaxy | Wiley Online Books
Covers both the fundamentals and the state-of-the-art technology used for MBE Written by expert researchers working on the frontlines of the field, this book covers fundamentals of Molecular Beam Epitaxy (MBE) technology and science, as well as state-of-the-art MBE technology for electronic and optoelectronic device applications. MBE applications to magnetic
Silicon Based Thin Film Solar Cells, 2013 81-107 81 CHAPTER 4
Molecular Beam Epitaxy (MBE) is a technology used for the deposition of thin film compound semiconductors, metals or insulators that allows a precise control of compositional profiles by...
Molecular beam epitaxy of InAlAsSb for the top cell in high
Abstract: Triple-junction solar cells lattice-matched to InP have recently gained interest as an alternative to traditional GaAs-based devices. We predict a 1.74, 1.17, 0.70 eV device can attain high efficiency and can be achieved lattice-matched to InP. However, InAlAsSb, a relatively immature material, is required for the top junction. Here
Molecular Beam Epitaxy
Molecular beam epitaxy (MBE) and metal-organic vapor phase epitaxy (MOVPE) were used in parallel to grow solar cells with the homojunction of p-InGaN/n-InGaN and p-InGaN/i-InGaN/p
High-efficiency GaAs and GaInP solar cells grown by all solid-state
DOI: 10.1186/1556-276X-6-576 Corpus ID: 18932858; High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy @article{Lu2011HighefficiencyGA, title={High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy}, author={Shulong Lu and Lian Ji and Wei He and Pan Dai and Hui Yang and
Molecular beam epitaxy growth of germanium junctions for multi
We report on the molecular beam epitaxy (MBE) growth and device characteristics of Ge solar cells. Integrating a Ge bottom cell beneath a lattice-matched triple
Molecular beam epitaxy growth of germanium junctions for
molecular beam epitaxy Pan Dai, Shulong Lu, Shiro Uchida et al.-GaInNAs/Ge (1.10/0.67 eV) double-junction solar cell grown by metalorganic chemical vapor deposition for high efficiency four-junction solar cell application Xiaobin Zhang, Bingzhen Chen, Xu Pan et al.-Exploring the potential of semiconducting BaSi 2 for thin-film solar cell applications Takashi Suemasu and
Molecular Beam Epitaxy Deposition of In Situ O‐Doped CdS
For high-efficiency Sb 2 (S,Se) 3 solar cells, the most commonly used electron-transporting layer of cadmium sulfide (CdS) is generally prepared by chemical bath deposition (CBD) approach. However, the hazardous waste liquid from the chemical bath and the sensitivity of the deposition process to the environment are challenges to
High-efficiency AlGaInP solar cells grown by molecular beam epitaxy
AlGaInP is an ideal material for ultra-high efficiency, lattice-matched multi-junction solar cells grown by molecular beam epitaxy (MBE) because it can be grown lattice-matched to GaAs with a wide 1.9–2.2 eV bandgap. Despite this potential, AlGaInP grown by molecular beam epitaxy (MBE) has yet to be fully explored, with the initial 2.0 eV devices
Molecular beam epitaxy of InAlAsSb for the top cell in high
Abstract: Triple-junction solar cells lattice-matched to InP have recently gained interest as an alternative to traditional GaAs-based devices. We predict a 1.74, 1.17, 0.70 eV device can
Basics of Molecular Beam Epitaxy (MBE) technique
Molecular Beam Epitaxy (MBE) represents a widely used growth technique to approach the basic research applied to the growth of semiconductor films and multilayer...
High-efficiency GaAs and GaInP solar cells grown by all solid
We report the initial results of GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy (MBE) technique. For GaAs single-junction solar cell, with the application of AlInP as
A review of molecular-beam epitaxy of wide bandgap complex
Abstract Much progress has been made in the area of wide bandgap semiconductors for applications in electronics and optoelectronics such as displays, power electronics, and solar cells. New materials are being sought after and considerable attention has been given to complex oxides, specifically those with the perovskite crystal structure.
High-efficiency GaAs and AlGaAs solar cells grown by molecular beam epitaxy
One-sun AM 1.5 efficiencies of 23.8% for 0.25 cm/sup 2/ area GaAs solar cells fabricated from molecular beam epitaxy (MBE) material were obtained. The performance is comparable to that obtained with metalorganic chemical vapor deposited (MOCVD) material. One-sun AM 1.5 efficiencies of 16.1% for 0.25 cm/sup 2/ area Al/sub 0.22/Ga/sub 0.78/As solar
Abrupt Te doping of GaInP grown by molecular beam epitaxy for solar
We report abrupt Te doping of GaInP solar cells grown by molecular beam epitaxy (MBE) through the use of a low substrate temperature of 420 °C and subsequent elimination of surface segregation.
Molecular Beam Epitaxy
Molecular beam epitaxy (MBE) and metal-organic vapor phase epitaxy (MOVPE) were used in parallel to grow solar cells with the homojunction of p-InGaN/n-InGaN and p-InGaN/i-InGaN/p-InGaN.
Mn-Doped Ge Nanoparticles Grown on SiO2 Thin Films
In this work, we propose a novel efficient strategy based on the combination of molecular beam epitaxy deposition and the solid-state dewetting process for the growth and self-assembly of magnetic GeMn nanoparticles on the SiO 2
6 FAQs about [Molecular beam epitaxy solar cells]
Can molecular beam epitaxy be used as a solar absorber material?
Methods that are used to grow epitaxial III–V compound films, such as molecular beam epitaxy (MBE) or metal organic chemical vapour deposition (MOCVD) have revealed interesting features for fundamental studies like phase segregation and defect formation, but could not be used to form the absorber material for high-efficiency solar cells.
Does molecular beam epitaxy improve the performance of AlGaInP solar cells?
We demonstrate 2.0–2.2 eV AlGaInP solar cells grown by molecular beam epitaxy and their performance improvement by rapid thermal annealing (RTA). As grown, these cells exhibit lower performance than their counterparts grown by metal-organic vapor phase epitaxy (MOVPE), indicating a high concentration of point defects.
What is molecular beam epitaxy (MBE)?
Molecular Beam Epitaxy (MBE) represents a widely used growth technique to approach the basic research applied to the growth of semiconductor films and multilayer structures.
What is a molecular beam epitaxy system?
A molecular beam epitaxy system is basically a vacuum evaporation app aratus. What may be considered a standard MBE system is shown sch ematically in Fig. 2. Figure 1: (a) Structure of the 50 stacked quantum dot solar cell grown by MBE.
Which epitaxy is used in parallel to grow solar cells?
Jayaraman Theerthagiri, in Reference Module in Earth Systems and Environmental Sciences, 2023 Molecular beam epitaxy (MBE) and metal-organic vapor phase epitaxy (MOVPE) were used in parallel to grow solar cells with the homojunction of p-InGaN/n-InGaN and p-InGaN/i-InGaN/p-InGaN.
How thick is a 50 stacked quantum dot solar cell?
(a) Structure of the 50 stacked quantum dot solar cell grown by MBE. Each GaP layer has a nominal thickness of 1 ML = 0.273 nm. (b) Cross-sectional TEM image of the 50 stacked quantum dot layers. The arrows indicate the defects observable in the image (AIP license n. 2546451267415).
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